NPN wideband silicon germanium RF transistor. Rev. 1 — 29 April 2011. Product data sheet. 1. Product profile. 1.1 General description. NPN silicon germanium microwave
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Characteristics Symbol Rating Unit Weight: 6 mg (Typ.) Collector-Base voltage VCBO 6 V. Collector-Emitter voltage VCEO 4 V. Collector-Current IC 50 mA. Base-Current IB 10 mA. Collector Power dissipation PC 100 mW. Collector Power dissipation PC(Note1) 250 mW. Junction temperature Tj 150 °C. Storage temperature Range Tstg −55~150 °C.
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1.1 General description. NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for
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NPN Wideband Silicon Germanium RF Transistor. BFU910F Active Receive alerts. Overview. Product Details. Documentation. Design Resources. Support. NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to
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1.1 General description. NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for
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NPN wideband silicon germanium RF transistor PDF Rev 1.0 Apr 20, 2011 129.4 KB BFU710F English User Guide BFU6xx/BFU7xx Transistor Starter Kit Users Manual PDF Rev 1.0 Apr 10, 2012 57.6 KB UM10559 English Brochure
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1.2 Features. Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz. High maximum stable gain 27 dB at 1.8 GHz. 110 GHz fT silicon germanium technology. 1.3 Applications. 2nd LNA stage and mixer stage in DBS LNB’s. Satellite radio. Low noise amplifiers for microwave communications systems. WLAN and CDMA
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1.2 Features. Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz. High maximum stable gain 27 dB at 1.8 GHz. 110 GHz fT silicon germanium technology. 1.3 Applications. 2nd LNA stage and mixer stage in DBS LNB’s. Satellite radio. Low noise amplifiers for microwave communications systems. WLAN and CDMA
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· In the bad old days of germanium, PNP was the easiest transistor to make out of the available doped forms. With silicon, When we go beyond germanium and silicon, and create other substrates, the so-called 3
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Low noise high linearity RF transistor. 110 GHz f T silicon germanium technology. Optimal linearity for low current and high gain. Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz. Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
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NPN wideband silicon germanium RF transistor PDF Rev 3.0 Dec 12, 2012 70.1 KB ON5088 English Package Information Plastic surface-mounted flat pack package; 4 leads PDF Rev 1.0 Feb 8, 2016 192.2 KB SOT343F Support What do you need help with?
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Features. Low noise high gain microwave transistor. Noise figure (NF) = 0.7 dB at 5.8 GHz. High maximum stable gain 27 dB at 1.8 GHz. 110 GHz f T silicon germanium technology. Target Applications. 2nd LNA stage and mixer stage in DBS LNB’s. Satellite radio. Low noise amplifiers for microwave communications systems.
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1.1 General description. NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for
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The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high
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AC176K NPN Germanium transistor from the 70's by Siemens. as used in many analogue synthesisers and guitar effects box 's of the period. these come already mounted in a big aluminium block (7 x 7 x 18.5mm-NS257 package *)
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Buy/Parametrics. Package/Quality. NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. See product image. Data Sheet.
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: 139KBNPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION. This device is sensitive to
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very early 2N388 NPN Germanium transistor in a TO-5 can from SESCO. This evil and sinister looking device is matt black with long gold leads, one for Darth Vader. 2N3866 NPN silicon transistor from TRW. Package: TO-5 can with gold plated leads and base.
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AC187/01 Germanium NPN transistor. Download shortform AC187/01 datasheet: These come already mounted in a big aluminium block (7 x 7 x 15mm) which can be bolted down using an M2.5 bolt. (see photo) Status: NOS (New Old Stock) depending
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NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal
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AC141 Germanium NPN transistor Description AC141 Germanium NPN transistor. Package: TO-1 can Download AC141 datasheet: Status: NOS (New Old Stock)-unbranded. Dates where marked 1972 to 1976 Individually tested components: YES 3
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NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits Low noise high gain microwave min
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: 122KBNPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal
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16 SiGe HBT Technology B = w2 B 2D nB + w B v sat; (1.8) ˝ BC = w BC 2v sat: (1.9) Here, w B is the width of the neutral base region, w BC is the depletion width of the base–collector junction, D nB is the electron diffusion coefficient in the base, and v sat is the saturation velocity of electrons.
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NPN wideband silicon germanium RF transistor PDF 1.2 Dec 24, 2012 149.9 KB BFU768F Low Noise Fast Turn ON/OFF 5-5.9GHz WiFi LNA with BFU768F PDF 2.0 Dec 11, 2015 717.6 KB
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Part 1: A high level view of transistor operation and bias: In transistor-based fuzz pedals, particularly vintage germanium-based units, proper operation and sound depends on transistor bias voltage. You may hear that some poor-sounding original units were “mis-biased” or biased poorly. Transistor bias refers to the DC voltage point that
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Leadless ultra small plastic SMD package 1.0 mm 0.6 mm 0.34 mm. Low noise high gain microwave transistor. Noise figure (NF) = 0.75 dB at 6 GHz. High maximum power gain (Gp(max)) of 15.8 dB at 6 GHz. Excellent linearity in WiFi LNA from 5 GHz to 5.9 GHz: input third-order intercept point (IP3i) = 15 dBm.
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NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION. This device is sensitive to
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· In this work, the transient γ-radiation and laser-simulated experiments were performed on SiGe HBTs to investigate the effect of transient dose rate effect (TDRE). The rest of this article is organized as follows: Sec. II introduces the transient γ-radiation experiment of SiGe HBTs, including the device under test (DUT), radiation facility,
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NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION. This device is sensitive to
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Trituradora de piedra vendida por proveedores certificados, como trituradoras de mandíbula/cono/impacto/móvil, etc.
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